Specifications :
– Model Code (Capacity)1) : MZ-V8P250BW (250GB) / MZ-V8P500BW (500GB)
– APPLICATION : Client PCs / laptops
– FORM FACTOR : M.2 (2280)
– INTERFACE : PCIe Gen 4.0 x4, NVMe 1.3c
– DIMENSION (WxHxD) : 80.15 x 22.15 x 2.38 (mm)
– WEIGHT : Max 9.0 g
– STORAGE MEMORY : Samsung V-NAND 3-bit MLC
– CONTROLLER : Samsung Elpis Controller
– CACHE MEMORY : Samsung 512MB Low Power DDR4 SDRAM (250/500GB)
– TRIM SUPPORT : Supported
– S.M.A.R.T SUPPORT : Supported
– GC (GARBAGE COLLECTION) : Auto Garbage Collection Algorithm
– ENCRYPTION SUPPORT : AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
– WWN SUPPORT : Not Supported
– DEVICE SLEEP MODE SUPPORT : Yes
– SEQUENTIAL READ :
250GB: Up to 6,400 MB/s
500GB: Up to 6,900 MB/s
1TB: Up to 7,000 MB/s
2TB: Up to 7,000 MB/s
– SEQUENTIAL WRITE:
250GB: Up to 2,700 MB/s
500GB: Up to 5,000 MB/s
1TB: Up to 5,000 MB/s
2TB: Up to 5,100 MB/s
– RANDOM READ (4KB, QD32) :
250GB: Up to 500,000 IOPS
500GB: Up to 800,000 IOPS
1TB: Up to 1,000,000 IOPS
2TB: Up to 1,000,000 IOPS
– RANDOM WRITE (4KB, QD32) :
250GB: Up to 600,000 IOPS
500GB: Up to 1,000,000 IOPS
1TB: Up to 1,000,000 IOPS
2TB: Up to 1,000,000 IOPS
– RANDOM READ (4KB, QD1) :
250GB: Up to 22,000 IOPS
500GB: Up to 22,000 IOPS
1TB: Up to 22,000 IOPS
2TB: Up to 22,000 IOPS
– RANDOM WRITE (4KB, QD1)
250GB: Up to 60,000 IOPS
500GB: Up to 60,000 IOPS
1TB: Up to 60,000 IOPS
2TB: Up to 60,000 IOPS
– AVERAGE POWER CONSUMPTION
(SYSTEM LEVEL)3)
250GB: Average 5 W Maximum 7 W
500GB: Average 5.9 W Maximum 7.4 W
– POWER CONSUMPTION (IDLE)3) : Max. 35 mW
– POWER CONSUMPTION (DEVICE SLEEP) : Max. 5 mW
– ALLOWABLE VOLTAGE : 3.3 V ± 5 % Allowable voltage
– RELIABILITY (MTBF) : 1.5 Million Hours Reliability
– OPERATING TEMPERATURE- 0-70 ℃
– SHOCK:1,500 G & 0.5 ms
– Warranty 5 Years